St. Petersburg researchers suggest that infrared emission
should be used to treat burns. The Foundation for
Assistance to Small Innovative Enterprises (FASIE)
will help the authors in the framework of the "Start"
program to develop and begin production of devices
required for such treatment based on silicon light-emitting
unique device based on silicon light-emitting diodes
was developed by the St. Petersburg physicists - specialists
of the Ioffe Physico-Technical Institute, Russian
Academy of Sciences, and the St. Petersburg State
Electrotechnical University. Emission of far infra-red
range of wave-lengths generated by this device will
help to cure in an ordinary hospital even such burns
that could be previously treated only in specialized
burn centers. The Foundation for Assistance to Small
Innovative Enterprises (FASIE) will help the researchers
to arrange production of remarkable devices.
"The fact that the far infrared emission promotes
quicker healing of burns can be considered ascertained,
says project manager, Professor Bagrayev, Doctor of
Science (Physics&Mathematics). We have already
made sure of that through applying the small-size
device developed by us, which proved well in treating
arthrosis, wounds, ulcers and bedsore. It has turned
out that in case of burns the device helps very efficiently:
affected surface heals quicker and hurts less. However,
irradiation of a large surface accordingly requires
the radiation source of a larger flat area than the
one previously used.
The problem is that until now there existed no far
infrared radiation sources of a larger flat area.
That is why we have patented our apparatus and treatment
mode not only in Russia but also abroad. The radiation
spectrum required for efficient treatment should be
wideband one, from 3.5 through 40 microns, while all
previously known far infrared light-emitting diodes
either had narrow radiation spectrum and were expensive
or provided strong parasitic effect - emission in
the near infrared area. That is, they heat up the
patient too much and can even burn the patient, which
is absolutely unacceptable."
The far infrared range panel emitters developed by
the group under guidance of N.T. Bagrayev are based
on silicon. The researchers have developed technology,
which allows to grow extra small p-n barriers (only
two to three nm deep) on the surface of single-crystalline
silicon, i.e. tiny radiating light-emitting diode
elements parted by 2 nm thick barriers.
However, the value of that structure would have been
low, if the authors did not invent the way to reinforce
emission from these extrasmall light-emitting diodes.
And they did invent it! The researchers learned to
grow a resonator layer on the same plate - silicon
microscopical pyramidia, covering all over the formerly
smooth crystal boundary, consisting of multitude radiating
Based on such well-disposed rows of silicon light-emitting
diodes, the researchers have now learned to produce
large panels (the square being 1.8 m x 0.6 m), each
of the panel will contain 108 pieces. Final clinical
trials of the new device in the Vishnevsky Scientific
Research Institute are scheduled for April this year,
but the authors do not expect any troublesome surprises:
all preliminary tests have been successful. Moreover,
the researchers are sure that the device they have
developed will be efficient even in cases that seemed
hopeless so far- i.e., patients in shock condition,
with large area of burns.
The first infrared devices for treating burns are
scheduled for release already by the end of 2006.
These vitally important devices will be produced by
a small-scale enterprise to be set up in the framework
of the 'Start" program with the help of the Foundation
for Assistance to Small Innovative Enterprises. The
enterprise will be called "Dipole Structures".