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Toshiba Announces Development of NANO FLASH(TM) Technology, Launches First NANO FLASH-Based Embedded Product, a 32-Bit MIPS RISC Microcontroller


Ultra-Low Power Consumption With 40MHz Operation
and Built-in Peripherals Make MCU a Perfect Fit for

Battery-Operated Digital Consumer Applications

SAN FRANCISCO, March 7 /PRNewswire/ -- Toshiba America Electronic
Components, Inc. (TAEC)* today announced the development of NANO FLASH(TM), a new technology for embedded flash microcontrollers that combines the best attributes of a NAND flash cell and a NOR flash peripheral circuit to create
high-density embedded memory with ultra-low power consumption.

TAEC today launched the first NANO FLASH-based product, a 32-bit single-chip MIPS-based(TM) reduced instruction set computer (RISC) microcontroller (MCU).
Designated TMP19A43FDXBG, the new high-performance MCU is ideal for
battery-operated digital consumer applications, including single-lens reflex
digital still cameras, and is also well-suited for home-appliance applications. Sampling is scheduled to start in October 2005. TAEC will be displaying the TMP19A43FDXBG at the Embedded Systems Conference here this

"Toshiba NANO FLASH technology represents a significant advancement in
embedded memory," said Don Schneider, business development manager of the ASSP Business Unit at TAEC. "With the ultra-low-power NANO FLASH technology, a 4-megabit (Mb) memory accessed at 40 megahertz (MHz) draws only 7 milliamperes (mA), low enough to replace mask read-only memory (ROM) in battery-operated products. The highly integrated Toshiba TMP19A43FDXBG incorporates NANO FLASH memory with full-speed operation at 40MHz along with a number of peripherals, including high-speed 10-bit analog-to-digital (A/D) converters, digital-to-analog (D/A) converters and 16- and 32-bit timers."
TMP19A43FDXBG integrates the Toshiba TX19A core with its excellent code
efficiency and interrupt responsiveness, 512KB of NANO FLASH memory and 24KB of random-access memory (RAM). Other built-in functionality includes
17 channels of 16-/32-bit timer/counters, 16 channels of high-speed 10-bit A/D
converters, 2 channels of 8-bit D/A converters and a 6-channel high-speed
serial interface.

Main Features

* Integrates 512KB NANO FLASH memory and 24KB RAM that enables the
control of large programs with a single chip

* Small package size enables system miniaturization; housed in a small
FBGA package with package dimensions of 12 millimeters (mm) x 12mm,
1.4mm thick

* Incorporates a 10-bit A/D converter with 16 input channels with rapid
conversion of 1.15 microseconds and an 8-bit D/A converter with 2
output channels for enhanced analog functionality

* Provides 16 external interrupt pins and 32 key-on wake up pins that
include dynamic pull-up and are operable with the 32kHz sub-clock to
reduce power consumption

* Offers on-board debugging functionality that can rewrite the embedded
flash memory to facilitate system development.

Key Specifications of New Microcontroller

Part Number TMP19A43FDXBG
Embedded Memory 512KB NANO FLASH memory and 24KB RAM
Operating Frequency 40MHz
Power Supply Voltage Internal: 1.35Volts (V) -1.65V
Input/Output: 2.7V - 3.6V
A/D converter: 2.7V -3.6V
D/A converter: 2.3V -2.7V
Built-in Peripheral
Functions DMA controller, 16-/32-bit timers,
general-purpose serial interface, Serial Bus
interface, A/D converters, D/A converters,
watch dog timer, key-on wake up, clock timers
Package FBGA193 with 0.65-mm pitch

Development Background
Embedded NOR flash technologies generally require substantially more power
than the corresponding mask ROM technology. Since battery life is affected by
the current consumption of the device, this power drain prevents effective use
of NOR flash technology as a new-product launch vehicle or to replace mask ROM
with the NOR flash equivalent in production. To overcome these limitations,
Toshiba Corporation developed NANO FLASH technology for flash embedded

NANO FLASH technology uses a NOR architecture with memory cells connected
in parallel to bit-lanes to achieve the high-speed random access required for
embedded program memory. It employs NAND flash cell technology with
Fowler-Nordheim (FN) tunneling for both program and erase to provide very fast
program and erase times with ultra-low power consumption. In addition,
Toshiba improved the readout circuit and its timing control which diminished
DC current dissipation and allowed low-power consumption. Finally, the
process was changed from a memory process to a logic process in order to embed
the flash memory cells with high-performance CMOS technology.

Technical Specifications of Toshiba NANO FLASH

Memory Size 4Mb
Power supply 1.5V/3.3V (2 power sources)
Block Size 1 megabit
Standby Current 3 microamperes (typical)
Read current 7mA at 40MHz operation, typical
Write time 0.3 second/block (typical)
Erase time 0.1 second/block (typical)

About TAEC
Combining quality and flexibility with design engineering expertise, TAEC
brings a breadth of advanced, next-generation technologies to its customers.
This broad offering includes semiconductors, flash memory-based storage
solutions, and displays for the computing, wireless, networking, automotive
and digital consumer markets.

TAEC is an independent operating company owned by Toshiba America, Inc., a
subsidiary of Toshiba Corporation, one of the five largest semiconductor
companies worldwide in terms of global sales for the year 2003 according to
Gartner/Dataquest's Worldwide Semiconductor Market Share Ranking. Toshiba is
a world leader in high-technology products with more than 300 major
subsidiaries and affiliates worldwide. For additional company and product
information, please visit TAEC's website at chips.toshiba.com. For technical
inquiries, please e-mail Tech.Questions@taec.toshiba.com.

NANO FLASH is a trademark of Toshiba Corporation. All trademarks and
tradenames used herein are the properties of their respective holders.

SOURCE Toshiba America Electronic Components, Inc.
Web Site: http://www.chips.toshiba.com


This story has been adapted from a news release -
Diese Meldung basiert auf einer Pressemitteilung -
Deze tekst is gebaseerd op een nieuwsbericht -

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