News Release by Infineon and Nanya Munich/Germany and
29, 2005 – Infineon Technologies AG (FSE/NYSE: IFX), Munich, and Nanya Technology
Corporation (NTC), Taoyuen/ Taiwan, today announced that they have signed an
agreement to expand their development cooperation on DRAMs. The agreement provides
for the joint development of advanced 60nm production technologies for 300mm
wafers, starting September 2005. The cooperation is the extension of the existing
co-development of the 90nm and 70nm production technologies and will help each
partner expand its position in the DRAM market while sharing development costs.
new production technology, jointly developed at
Infineon's Dresden site may be used in both companies
and at their manufacturing joint venture Inotera
Memories. Further collaboration on the development
of 60nm reference products in Munich is also planned.
Infineon and Nanya have together committed more
than 100 people to work on this development project.
The first 300mm wafer memory products using the
new 60nm process is expected to leave the production
line in 2008. “
extension of the successful strategic development
partnership with Nanya towards the 60nm technology
will pave the way to increase our DRAM manufacturing
productivity significantly,” explained Kin Wah Loh, Member of the Infineon's Management Board
and President of Infineon's Memory Products Business Group. “The cooperation
with Nanya proves the efficiency of Infineon's partnership approach and gives
us a competitive edge in the highly dynamic DRAM industry.”
strategic partnership with Infineon on the 60nm
technology will greatly enhance this camp's competitiveness,” stated
Dr. Jih Lien, President of Nanya Technologies. “Through the technology cooperation,
we can mutually benefit from the cost and resource sharing for leading edge R&D.”
addition to the joint development of advanced DRAM trench technologies,
Infineon and Nanya are also partners in the manufacturing
joint venture Inotera, situated in Taoyuan, Taiwan.
Inotera focuses on the production of DRAM products
and has in the meanwhile ramped to a capacity of
more than 60,000 wafer starts per month turning
it into one of the worldwide largest manufacturing
Nanya Nanya Technology Corporation, one member of the Formosa Plastics
Group, is a global leader in advanced memory semiconductors
and conducts research and development, design,
manufactory, and sales of DRAM products. The company
currently owns two 200mm fabrications with the
capacity of 73k wafers per month implementing 0.11um
has launched 90nm and 70nm joint development programs
and a 300mm joint venture (Inotera Memories, Inc.)
with Infineon Technology AG in December 2002 to
remain competitive in the upcoming “nanometer” era.
Nanya aims to become a major global DRAM supplier of quality, capability,
to visit us at www.nanya.com .
Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions
for automotive, industrial and multimarket sectors, for applications in communication,
as well as memory products. With a global presence, Infineon operates through
its subsidiaries in the US from San Jose, CA, in the Asia-Pacific region from
Singapore and in Japan from Tokyo. In fiscal year 2004 (ending September), the
company achieved sales of Euro 7.19 billion with about 35,600 employees worldwide.
Infineon is listed on the DAX index of the Frankfurt Stock Exchange and on the
New York Stock Exchange (ticker symbol: IFX). Further information is available