nanotehnoloogia, nanoteknologia, nanotechnologija, nanotehnologijas, nanoteknologija,
nanotechnologii, nanotecnologia, nanotehnologijo, nanoteknik
Materials Dominate Chip Evolution, Technologist Tells
ISMI Symposium Austin, TX (2 EDEN PRAIRIE, Minn.--November
8, 2005--NVE Corporation (Nasdaq: NVEC) said today
that it has been notified by the U.S. Patent and
Trademark Office of the expected grant of a key patent
for magnetothermal Magnetoresistive Random Access
NVE has been notified that the patent, titled "Thermally
Operated Switch Control Memory Cell," will
be issued today. The patent is number 6,963,098
and is the grant of a patent under the application
published by the U.S. Patent and Trademark Office
as number 2005-0002267.
MRAM is a revolutionary integrated-circuit memory
fabricated with nanotechnology that uses electron
spin to store data. MRAM has been called the ideal
memory because it has the potential to combine
the speed of SRAM, the density of DRAM, and the
non-volatility of flash memory. The market for
a universal memory that combines the speed of SRAM,
the density of DRAM and the nonvolatility of flash
could be $76.3 billion by 2019, according to market
research by iSuppli Corporation.
Magnetothermal MRAM uses a combination of tiny
magnetic fields and ultra-fast heating, both from
electrical current pulses to reduce the energy
required to write data and reduce the size of memory
cells while maintaining thermal stability. This
has the potential to enable low power, dense MRAM.
NVE has two previously announced magnetothermal
MRAM development contracts with Department of Defense
agencies, both with a goal of showing the design
feasibility of one-gigabit magnetothermal MRAM
"Magnetothermal MRAM promises to reduce both
cell size and write current, which could help make
MRAM a mainstream memory technology," said
NVE President and CEO Daniel A. Baker, Ph.D. "One
of the challenges with conventional MRAM is that
as the cells become smaller, the write energy is
squeezed into a smaller area and heat can become
a problem. Our team has turned that problem on
its head by using heat--even waste heat--to reduce
the current and energy required to write data,
much as turbocharging uses waste energy to improve
the efficiency of engines."
The grant will be NVE's 35th issued U.S. patent.
The company has more than 100 patents worldwide
either issued, pending, or licensed from others.
Links to the new patent as well as NVE's other
U.S. patents can be found at the "About NVE" section
of the company's website (www.nve.com).
NVE is a leader in the practical commercialization
of spintronics, a nanotechnology that many experts
believe represents the next generation of microelectronics.
NVE licenses its MRAM intellectual property and
sells spintronic sensors and couplers to revolutionize
data sensing and transmission.
Statements used in this press release that relate
to future plans, events, financial results or performance
are forward-looking statements that are subject
to certain risks and uncertainties including, among
others, such factors as uncertainties relating
to MRAM production by our licensees, risks in the
enforcement of our patents, as well as the risk
factors listed from time to time in our filings
with the SEC, including our Annual Report on Form
10-KSB and other reports filed with the SEC.