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NVE Notified of Magnetothermal MRAM Patent Grant

Improved Materials Dominate Chip Evolution, Technologist Tells ISMI Symposium Austin, TX (2 EDEN PRAIRIE, Minn.--November 8, 2005--NVE Corporation (Nasdaq: NVEC) said today that it has been notified by the U.S. Patent and Trademark Office of the expected grant of a key patent for magnetothermal Magnetoresistive Random Access Memory (MRAM).

NVE has been notified that the patent, titled "Thermally Operated Switch Control Memory Cell," will be issued today. The patent is number 6,963,098 and is the grant of a patent under the application published by the U.S. Patent and Trademark Office as number 2005-0002267.

MRAM is a revolutionary integrated-circuit memory fabricated with nanotechnology that uses electron spin to store data. MRAM has been called the ideal memory because it has the potential to combine the speed of SRAM, the density of DRAM, and the non-volatility of flash memory. The market for a universal memory that combines the speed of SRAM, the density of DRAM and the nonvolatility of flash could be $76.3 billion by 2019, according to market research by iSuppli Corporation.

Magnetothermal MRAM uses a combination of tiny magnetic fields and ultra-fast heating, both from electrical current pulses to reduce the energy required to write data and reduce the size of memory cells while maintaining thermal stability. This has the potential to enable low power, dense MRAM. NVE has two previously announced magnetothermal MRAM development contracts with Department of Defense agencies, both with a goal of showing the design feasibility of one-gigabit magnetothermal MRAM chips.

"Magnetothermal MRAM promises to reduce both cell size and write current, which could help make MRAM a mainstream memory technology," said NVE President and CEO Daniel A. Baker, Ph.D. "One of the challenges with conventional MRAM is that as the cells become smaller, the write energy is squeezed into a smaller area and heat can become a problem. Our team has turned that problem on its head by using heat--even waste heat--to reduce the current and energy required to write data, much as turbocharging uses waste energy to improve the efficiency of engines."

The grant will be NVE's 35th issued U.S. patent. The company has more than 100 patents worldwide either issued, pending, or licensed from others. Links to the new patent as well as NVE's other U.S. patents can be found at the "About NVE" section of the company's website (www.nve.com).

NVE is a leader in the practical commercialization of spintronics, a nanotechnology that many experts believe represents the next generation of microelectronics. NVE licenses its MRAM intellectual property and sells spintronic sensors and couplers to revolutionize data sensing and transmission.

Statements used in this press release that relate to future plans, events, financial results or performance are forward-looking statements that are subject to certain risks and uncertainties including, among others, such factors as uncertainties relating to MRAM production by our licensees, risks in the enforcement of our patents, as well as the risk factors listed from time to time in our filings with the SEC, including our Annual Report on Form 10-KSB and other reports filed with the SEC.


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